fqi20n06.lib

* FQI20N06 60V N-CHANNEL DMOSFET ELECTRICAL PARAMETERS
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.SUBCKT FQI20N06 20 10 30
Rg 10 1 1
M1 2 1 3 3 DMOS L=1u W=1u
.MODEL DMOS NMOS (VTO={3.78*{-0.00078*TEMP+1.0195}} KP={14.5*{-0.00077*TEMP+1.01925}}
+ THETA=0.056 VMAX=7.8E4 LEVEL=3)
Cgs 1 3 425p
Rd 20 4 17.5m TC=0.0087
Dds 3 4 DDS
.MODEL DDS D(BV={60*{0.001*TEMP+0.975}} M=0.5 CJO=145p VJ=0.8)
Dbody 3 20 DBODY
.MODEL DBODY D(IS=3.0E-12 N=1.02 RS=7.5m EG=1.17 TT=43n)
Ra 4 2 15m TC=0.0087
Rs 3 5 1.0m
Ls 5 30 1.97n
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1)
Cgdmax 7 4 413p
Rcgd 7 4 10meg
Dgd 6 4 DGD
Rdgd 4 6 10meg
.MODEL DGD D(M=0.56 CJO=413p VJ=0.48)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS FQI20N06
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* FAIRCHILD PUCHUN S.KOREA CASE: I2-PAK PID: FQP20N06 
* 2000-03-25 CREATION