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[{ | |
"answer": { | |
"state": "IN_PROGRESS", | |
"replies": [ | |
{ | |
"groundedContent": { | |
"content": { | |
"role": "model", | |
"text": "**Analyzing Precursor Gases**\n\nI'm currently focusing on finding a suitable ALD precursor gas for selective SiO2 etching. The key constraints are low temperature, low pressure, non-volatile byproducts, and compatibility with semiconductor manufacturing, including stability and safety. I'm preparing to launch a Google search to find appropriate candidates.\n\n\n", | |
"thought": true |
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[{ | |
"answer": { | |
"state": "IN_PROGRESS", | |
"replies": [ | |
{ | |
"groundedContent": { | |
"content": { | |
"role": "model", | |
"text": "好的,這是一個非常具體且專業的研究請求。為了有效地找到您需要的資訊,我將制定一個詳細的研究計畫。\n\n首先,我將進行初步的線上研究,以了解目前在低溫低壓條件下選擇性蝕刻SiO2的相關技術和可能的前驅物氣體。這將幫助我建立一個更完善、更貼近您需求的研究計畫。\n\n請稍候,我正在為您進行初步研究。\n好的,感謝您的耐心等候。在進行初步研究後,我為您制定了一份詳細的研究計畫,希望能協助您找到符合需求的ALD前驅物氣體。\n\n在我們開始深入研究之前,請您先過目這份計畫,看看是否符合您的預期,或是有任何需要調整的地方。" | |
} |
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[{ | |
"answer": { | |
"state": "IN_PROGRESS", | |
"replies": [ | |
{ | |
"groundedContent": { | |
"content": { | |
"role": "model", | |
"text": "**Investigating Precursors**\n\nI'm currently focusing on identifying possible ALD precursor gases for selective SiO2 etching. The parameters are quite restrictive: low temperature and pressure, non-volatile byproducts, and of course, semiconductor-grade stability and safety. I'm working through the chemical space.\n\n\n", | |
"thought": true |