stm_flash.c

uint32_t Flash_Write_Data (uint32_t StartPageAddress, uint32_t *Data, uint16_t numberofwords) {
	static FLASH_EraseInitTypeDef EraseInitStruct;
	uint32_t PAGEError;
	int sofar=0;

    /* Unlock the Flash to enable the flash control register access *************/
    HAL_FLASH_Unlock();

    /* Fill EraseInit structure*/
    EraseInitStruct.TypeErase   = FLASH_TYPEERASE_SECTORS;
    EraseInitStruct.Sector = 11;
    EraseInitStruct.NbSectors = 1;
    EraseInitStruct.Banks     = 0;
    EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3;

    if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
        /*Error occurred while page erase.*/
        return HAL_FLASH_GetError ();
    }

    /* Program the user Flash area word by word*/

    while (sofar<numberofwords) {
        if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, StartPageAddress, Data[sofar]) == HAL_OK) {
            StartPageAddress += 4;  // use StartPageAddress += 2 for half word and 8 for double word
            sofar++;
        } else {
            /* Error occurred while writing data in Flash memory*/
            return HAL_FLASH_GetError ();
        }
    }

    /* Lock the Flash to disable the flash control register access (recommended
        to protect the FLASH memory against possible unwanted operation) *********/
    HAL_FLASH_Lock();

    return 0;
}