CMOS Athena model

cmos.in

go athena

line x loc=0 spac=0.2
line x loc=10 spac=0.2

line y loc=0 spac=0.15
line y loc=1 spac=0.15
line y loc=5 spac=1

# Wafer
init silicon c.boron=5e14 orientation=100 two.d

# Pad oxide 35nm
deposit oxide thick=0.035 divisions=10

# Si3N4 deposition
deposit nitride thick=0.15 divisions=10

# dry-etch Si3N4 for N-Well
etch nitride right p1.x=5

# N-Well implant
implant phosphor dose=1e13 energy=100 tilt=7 rotation=30 crystal

# Well oxidation
diffuse time=115 temp=980 weto2 press=1

# strip Si3N4
etch nitride left p1.x=5

# P-Well implant
implant boron dose=6.5e12 energy=100 tilt=7 rotation=30 crystal

# Well diffusion
diffuse time=90 temp=1150 nitro press=1

# BOE wet etch ?
etch oxide all

# Pad oxide
deposit oxide thick=0.035

# Si3N4 deposititon
deposit nitride thick=0.15

# Si3N4 Dry-etch
etch nitride left p1.x=0.5

etch nitride start x=4.5 y=0.3
etch continue x=5 y=0.3
etch continue x=5 y=-0.2
etch done x=4.5 y=-0.2

etch nitride right p1.x=9.5

etch nitride start x=5 y=0.3
etch continue x=5.5 y=0.3
etch continue x=5.5 y=-0.2
etch done x=5 y=-0.2

# PR coat
deposit photoresist thick=1.6
etch photoresist left p1.x=5

# P-Field implant
implant boron dose=5e13 energy=25 tilt=7 rotation=30 crystal
etch photoresist all

# Field oxide
diffuse time=110 temp=980 weto2 press=1

# Si3N4 stripping
etch nitride all

# Pad oxide remove
etch oxide dry thick=0.035

# SAC oxide
deposit oxide thick=0.035

# VT implant
implant boron dose=2.5e12 energy=25 tilt=7 rotation=30 crystal

# remove SAC oxide
etch oxide dry thick=0.035

# Gate oxide
deposit oxide thick=0.02

# Poly depositition
deposit poly thick=0.35

# Poly dope
implant boron dose=1e15 energy=45 tilt=0 rotation=30 crystal

# Poly etch
etch poly left p1.x=2

etch poly start x=3 y=0
etch poly continue x=5 y=0
etch poly continue x=5 y=-1
etch poly done x=3 y=-1

etch poly right p1.x=8

etch poly start x=5 y=0.4
etch poly continue x=7 y=0.4
etch poly continue x=7 y=-0.4
etch poly done x=5 y=-0.4

# PRE S/D oxidation
deposit oxide thick=0.015

# PR coat & NMOS LDD implant
deposit photoresist thick=1.6

etch photoresist left p1.x=5

implant phosphor dose=2.5e13 energy=60 tilt=0 rotation=30 crystal

etch photoresist all

# spacer
deposit oxide thick=0.3 divisions=10

etch oxide dry thick=0.3

# PR coat & N+ implant
deposit photoresist thick=1.6
etch photoresist left p1.x=5

implant arsenic dose=5.5e15 energy=80 tilt=7 rotation=30 crystal

etch photoresist all

# PR coat & P+ implant
deposit photoresist thick=1.6
etch photoresist right p1.x=5

implant boron dose=2.8e15 energy=25 tilt=7 rotation=30 crystal

etch photoresist all

#
diffuse time=1 temp=900 nitro press=1

#
struct outfile=cmos.str
tonyplot cmos.str

#
extract name="N S/D Sheet R" sheet.res material="Silicon" mat.occno=1 x.val=1.5 \
        region.occno=1

#
extract name="P S/D Sheet R" sheet.res material="Silicon" mat.occno=1 x.val=8.5 \
        region.occno=1

#
extract name="N S/D Xj" xj material="Silicon" mat.occno=1 x.val=1.5 junc.occno=1

#
extract name="P S/D Xj" xj material="Silicon" mat.occno=1 x.val=8.5 junc.occno=1

#
extract name="N LDD Sheet R" sheet.res material="Silicon" mat.occno=1 \
        x.val=1.9 region.occno=1

#
extract name="N Vt" 1dvt ntype qss=3e10 x.val=2.5

#
extract name="P Vt" 1dvt ptype qss=3e10 x.val=7.5