Products for N-Channel MOSFET Transistor
How an n-Channel MOSFET works
MOSFET
N-Channel MOSFET 60V 30A
Overview for N-Channel MOSFET Transistor
20V-30V N-Channel Power MOSFET
The metal—oxide—semiconductor field-effect transistor MOSFET , MOS-FET , or MOS FET is a type of field-effect transistor FET. It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in The main advantage of a MOSFET is that it requires almost no input current to control the load current, when compared with bipolar transistors. In an "enhancement mode" MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In "depletion mode" transistors, voltage applied at the gate reduces the conductivity. The "metal" in the name MOSFET is now often a misnomer because the gate material is often a layer of polysilicon polycrystalline silicon. A metal-insulator-semiconductor field-effect transistor or MISFET is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect-transistor. The MOSFET is by far the most common transistor in digital circuits, as hundreds of thousands or millions of them may be included in a memory chip or microprocessor. Since MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic. The basic principle of this kind of transistor was first patented by Julius Edgar Lilienfeld in Bell Labs was able to work out an agreement with Lilienfeld, who was still alive at that time it is not known if they paid him money or not. In , Dawon Kahng and Martin M. John Atalla at Bell Labs invented the metal—oxide—semiconductor field-effect transistor MOSFET as an offshoot to the patented FET design. It used crystalline silicon for the semiconductor and a thermally oxidized layer of silicon dioxide for the insulator. The silicon MOSFET did not generate localized electron traps at the interface between the silicon and its native oxide layer, and thus was inherently free from the trapping and scattering of carriers that had impeded the performance of earlier field-effect transistors. Usually the semiconductor of choice is silicon , but some chip manufacturers, most notably IBM and Intel , recently started using a chemical compound of silicon and germanium SiGe in MOSFET channels. Unfortunately, many semiconductors with better electrical properties than silicon, such as gallium arsenide , do not form good semiconductor-to-insulator interfaces, and thus are not suitable for MOSFETs. Research continues on creating insulators with acceptable electrical characteristics on other semiconductor materials. The gate is separated from the channel by a thin insulating layer, traditionally of silicon dioxide and later of silicon oxynitride. When a voltage is applied between the gate and body terminals, the electric field generated penetrates through the oxide and creates an "inversion layer" or "channel" at the semiconductor-insulator interface. The inversion layer provides a channel through which current can pass between source and drain terminals. Varying the voltage between the gate and body modulates the conductivity of this layer and thereby controls the current flow between drain and source. This is known as enhancement mode. The traditional metal—oxide—semiconductor MOS structure is obtained by growing a layer of silicon dioxide Si O 2 on top of a silicon substrate and depositing a layer of metal or polycrystalline silicon the latter is commonly used. As the silicon dioxide is a dielectric material, its structure is equivalent to a planar capacitor , with one of the electrodes replaced by a semiconductor. When a voltage is applied across a MOS structure, it modifies the distribution of charges in the semiconductor. Conventionally, the gate voltage at which the volume density of electrons in the inversion layer is the same as the volume density of holes in the body is called the threshold voltage. When the voltage between transistor gate and source V GS exceeds the threshold voltage V th , it is known as overdrive voltage. This structure with p-type body is the basis of the n-type MOSFET, which requires the addition of n-type source and drain regions. A MOSFET is based on the modulation of charge concentration by a MOS capacitance between a body electrode and a gate electrode located above the body and insulated from all other device regions by a gate dielectric layer. If dielectrics other than an oxide are employed, the device may be referred to as a metal—insulator—semiconductor FET MISFET. Compared to the MOS capacitor, the MOSFET includes two additional terminals source and drain , each connected to individual highly doped regions that are separated by the body region. These regions can be either p or n type, but they must both be of the same type, and of opposite type to the body region. The source is so named because it is the source of the charge carriers electrons for n-channel, holes for p-channel that flow through the channel; similarly, the drain is where the charge carriers leave the channel. The occupancy of the energy bands in a semiconductor is set by the position of the Fermi level relative to the semiconductor energy-band edges. With sufficient gate voltage, the valence band edge is driven far from the Fermi level, and holes from the body are driven away from the gate. At larger gate bias still, near the semiconductor surface the conduction band edge is brought close to the Fermi level, populating the surface with electrons in an inversion layer or n-channel at the interface between the p region and the oxide. This conducting channel extends between the source and the drain, and current is conducted through it when a voltage is applied between the two electrodes. Increasing the voltage on the gate leads to a higher electron density in the inversion layer and therefore increases the current flow between the source and drain. For gate voltages below the threshold value, the channel is lightly populated, and only a very small subthreshold leakage current can flow between the source and the drain. When a negative gate-source voltage positive source-gate is applied, it creates a p-channel at the surface of the n region, analogous to the n-channel case, but with opposite polarities of charges and voltages. When a voltage less negative than the threshold value a negative voltage for the p-channel is applied between gate and source, the channel disappears and only a very small subthreshold current can flow between the source and the drain. The device may comprise a silicon on insulator SOI device in which a buried oxide BOX is formed below a thin semiconductor layer. Alternatively, the device may comprise a semiconductor on insulator SEMOI device in which semiconductors other than silicon are employed. Many alternative semiconductor materials may be employed. The operation of a MOSFET can be separated into three different modes, depending on the voltages at the terminals. In the following discussion, a simplified algebraic model is used. According to the basic threshold model, the transistor is turned off, and there is no conduction between drain and source. A more accurate model considers the effect of thermal energy on the Fermi—Dirac distribution of electron energies which allow some of the more energetic electrons at the source to enter the channel and flow to the drain. This results in a subthreshold current that is an exponential function of gate—source voltage. While the current between drain and source should ideally be zero when the transistor is being used as a turned-off switch, there is a weak-inversion current, sometimes called subthreshold leakage. This equation is generally used, but is only an adequate approximation for the source tied to the bulk. For the source not tied to the bulk, the subthreshold equation for drain current in saturation is [12] [13]. Some micropower analog circuits are designed to take advantage of subthreshold conduction. The subthreshold I—V curve depends exponentially upon threshold voltage, introducing a strong dependence on any manufacturing variation that affects threshold voltage; for example: The resulting sensitivity to fabricational variations complicates optimization for leakage and performance. The transistor is turned on, and a channel has been created which allows current between the drain and the source. The MOSFET operates like a resistor, controlled by the gate voltage relative to both the source and drain voltages. The current from drain to source is modeled as:. The transition from the exponential subthreshold region to the triode region is not as sharp as the equations suggest. The switch is turned on, and a channel has been created, which allows current between the drain and source. Since the drain voltage is higher than the source voltage, the electrons spread out, and conduction is not through a narrow channel but through a broader, two- or three-dimensional current distribution extending away from the interface and deeper in the substrate. The onset of this region is also known as pinch-off to indicate the lack of channel region near the drain. Although the channel does not extend the full length of the device, the electric field between the drain and the channel is very high, and conduction continues. The drain current is now weakly dependent upon drain voltage and controlled primarily by the gate—source voltage, and modeled approximately as:. According to this equation, a key design parameter, the MOSFET transconductance is:. I D is the expression in saturation region. As the channel length becomes very short, these equations become quite inaccurate. New physical effects arise. For example, carrier transport in the active mode may become limited by velocity saturation. When velocity saturation dominates, the saturation drain current is more nearly linear than quadratic in V GS. At even shorter lengths, carriers transport with near zero scattering, known as quasi- ballistic transport. In the ballistic regime, the carriers travel at an injection velocity that may exceed the saturation velocity and approaches the Fermi velocity at high inversion charge density. In addition, drain-induced barrier lowering increases off-state cutoff current and requires an increase in threshold voltage to compensate, which in turn reduces the saturation current. Application of a source-to-substrate reverse bias of the source-body pn-junction introduces a split between the Fermi levels for electrons and holes, moving the Fermi level for the channel further from the band edge, lowering the occupancy of the channel. The effect is to increase the gate voltage necessary to establish the channel, as seen in the figure. Simply put, using an nMOS example, the gate-to-body bias V GB positions the conduction-band energy levels, while the source-to-body bias V SB positions the electron Fermi level near the interface, deciding occupancy of these levels near the interface, and hence the strength of the inversion layer or channel. The body effect upon the channel can be described using a modification of the threshold voltage, approximated by the following equation:. The body can be operated as a second gate, and is sometimes referred to as the "back gate"; the body effect is sometimes called the "back-gate effect". A variety of symbols are used for the MOSFET. The basic design is generally a line for the channel with the source and drain leaving it at right angles and then bending back at right angles into the same direction as the channel. Sometimes three line segments are used for enhancement mode and a solid line for depletion mode see depletion and enhancement modes. Another line is drawn parallel to the channel for the gate. The "bulk" or "body" connection, if shown, is shown connected to the back of the channel with an arrow indicating pMOS or nMOS. Arrows always point from P to N, so an NMOS N-channel in P-well or P-substrate has the arrow pointing in from the bulk to the channel. If the bulk is connected to the source as is generally the case with discrete devices it is sometimes angled to meet up with the source leaving the transistor. If the bulk is not shown as is often the case in IC design as they are generally common bulk an inversion symbol is sometimes used to indicate PMOS, alternatively an arrow on the source may be used in the same way as for bipolar transistors out for nMOS, in for pMOS. Comparison of enhancement-mode and depletion-mode MOSFET symbols, along with JFET symbols. The orientation of the symbols, most significantly the position of source relative to drain is such that more positive voltages appear higher on the page than less positive voltages, implying current flowing "down" the page: In schematics where G, S, D are not labeled, the detailed features of the symbol indicate which terminal is source and which is drain. For enhancement-mode and depletion-mode MOSFET symbols in columns two and five , the source terminal is the one connected to the triangle. Additionally, in this diagram, the gate is shown as an "L" shape, whose input leg is closer to S than D, also indicating which is which. However, these symbols are often drawn with a "T" shaped gate as elsewhere on this page , so it is the triangle which must be relied upon to indicate the source terminal. For the symbols in which the bulk, or body, terminal is shown, it is here shown internally connected to the source i. This is a typical configuration, but by no means the only important configuration. In general, the MOSFET is a four-terminal device, and in integrated circuits many of the MOSFETs share a body connection, not necessarily connected to the source terminals of all the transistors. Digital integrated circuits such as microprocessors and memory devices contain thousands to millions of integrated MOSFET transistors on each device, providing the basic switching functions required to implement logic gates and data storage. Discrete devices are widely used in applications such as switch mode power supplies , variable-frequency drives and other power electronics applications where each device may be switching hundreds or thousands of watts. Radio-frequency amplifiers up to the UHF spectrum use MOSFET transistors as analog signal and power amplifiers. Radio systems also use MOSFETs as oscillators, or mixers to convert frequencies. MOSFET devices are also applied in audio-frequency power amplifiers for public address systems, sound reinforcement and home and automobile sound systems [ citation needed ]. Following the development of clean rooms to reduce contamination to levels never before thought necessary, and of photolithography [30] and the planar process to allow circuits to be made in very few steps, the Si—SiO 2 system possessed the technical attractions of low cost of production on a per circuit basis and ease of integration. Largely because of these two factors, the MOSFET has become the most widely used type of transistor in integrated circuits. General Microelectronics introduced the first commercial MOS integrated circuit in The earliest microprocessors starting in were all "MOS microprocessors"—i. In the s, "MOS microprocessors" were often contrasted with "CMOS microprocessors" and "bipolar bit-slice processors". The MOSFET is used in digital complementary metal—oxide—semiconductor CMOS logic, [33] which uses p- and n-channel MOSFETs as building blocks. Overheating is a major concern in integrated circuits since ever more transistors are packed into ever smaller chips. CMOS logic reduces power consumption because no current flows ideally , and thus no power is consumed, except when the inputs to logic gates are being switched. CMOS accomplishes this current reduction by complementing every nMOSFET with a pMOSFET and connecting both gates and both drains together. A high voltage on the gates will cause the nMOSFET to conduct and the pMOSFET not to conduct and a low voltage on the gates causes the reverse. During the switching time as the voltage goes from one state to another, both MOSFETs will conduct briefly. This arrangement greatly reduces power consumption and heat generation. The growth of digital technologies like the microprocessor has provided the motivation to advance MOSFET technology faster than any other type of silicon-based transistor. The insulating oxide between the gate and channel effectively isolates a MOSFET in one logic stage from earlier and later stages, which allows a single MOSFET output to drive a considerable number of MOSFET inputs. Bipolar transistor-based logic such as TTL does not have such a high fanout capacity. This isolation also makes it easier for the designers to ignore to some extent loading effects between logic stages independently. That extent is defined by the operating frequency: The two types of circuit draw upon different features of transistor behavior. Digital circuits switch, spending most of their time outside the switching region, while analog circuits depend on the linearity of response when the MOSFET is held precisely in the switching region. Nevertheless, MOSFETs are widely used in many types of analog circuits because of certain advantages [ vague ]. The characteristics and performance of many analog circuits can be scaled up or down by changing the sizes length and width of the MOSFETs used. By comparison, in most bipolar transistors the size of the device does not significantly affect its performance [ citation needed ]. In their linear region, MOSFETs can be used as precision resistors, which can have a much higher controlled resistance than BJTs. In high power circuits, MOSFETs sometimes have the advantage of not suffering from thermal runaway as BJTs do [ dubious — discuss ]. Also, MOSFETs can be configured to perform as capacitors and gyrator circuits which allow op-amps made from them to appear as inductors, thereby allowing all of the normal analog devices on a chip except for diodes, which can be made smaller than a MOSFET anyway to be built entirely out of MOSFETs. This means that complete analog circuits can be made on a silicon chip in a much smaller space and with simpler fabrication techniques. MOSFETS are ideally suited to switch inductive loads because of tolerance to inductive kickback. Some ICs combine analog and digital MOSFET circuitry on a single mixed-signal integrated circuit , making the needed board space even smaller. This creates a need to isolate the analog circuits from the digital circuits on a chip level, leading to the use of isolation rings and Silicon-On-Insulator SOI. Since MOSFETs require more space to handle a given amount of power than a BJT, fabrication processes can incorporate BJTs and MOSFETs into a single device. Mixed-transistor devices are called Bi-FETs bipolar FETs if they contain just one BJT-FET and BiCMOS bipolar-CMOS if they contain complementary BJT-FETs. Such devices have the advantages of both insulated gates and higher current density. MOSFET analog switches use the MOSFET to pass analog signals when on, and as a high impedance when off. Signals flow in both directions across a MOSFET switch. The source is the more negative side for an N-MOS or the more positive side for a P-MOS. All of these switches are limited on what signals they can pass or stop by their gate—source, gate—drain and source—drain voltages; exceeding the voltage, current, or power limits will potentially damage the switch. In the case of an n-type switch, the body is connected to the most negative supply usually GND and the gate is used as the switch control. Whenever the gate voltage exceeds the source voltage by at least a threshold voltage, the MOSFET conducts. The higher the voltage, the more the MOSFET can conduct. An N-MOS switch passes all voltages less than V gate —V tn. When the switch is conducting, it typically operates in the linear or ohmic mode of operation, since the source and drain voltages will typically be nearly equal. In the case of a P-MOS, the body is connected to the most positive voltage, and the gate is brought to a lower potential to turn the switch on. The P-MOS switch passes all voltages higher than V gate —V tp threshold voltage V tp is negative in the case of enhancement-mode P-MOS. This "complementary" or CMOS type of switch uses one P-MOS and one N-MOS FET to counteract the limitations of the single-type switch. The FETs have their drains and sources connected in parallel, the body of the P-MOS is connected to the high potential V DD and the body of the N-MOS is connected to the low potential Gnd. To turn the switch on, the gate of the P-MOS is driven to the low potential and the gate of the N-MOS is driven to the high potential. For voltages between V DD —V tn and Gnd—V tp , both FETs conduct the signal; for voltages less than Gnd—V tp , the N-MOS conducts alone; and for voltages greater than V DD —V tn , the P-MOS conducts alone. The voltage limits for this switch are the gate—source, gate—drain and source—drain voltage limits for both FETs. Also, the P-MOS is typically two to three times wider than the N-MOS, so the switch will be balanced for speed in the two directions. Tri-state circuitry sometimes incorporates a CMOS MOSFET switch on its output to provide for a low-ohmic, full-range output when on, and a high-ohmic, mid-level signal when off. The primary criterion for the gate material is that it is a good conductor. Highly doped polycrystalline silicon is an acceptable but certainly not ideal conductor, and also suffers from some more technical deficiencies in its role as the standard gate material. Nevertheless, there are several reasons favoring use of polysilicon:. While polysilicon gates have been the de facto standard for the last twenty years, they do have some disadvantages which have led to their likely future replacement by metal gates. Present high performance CPUs use metal gate technology, together with high-k dielectrics , a combination known as HKMG High-K, Metal Gate. The disadvantages of metal gates are overcome by a few techniques: As devices are made smaller, insulating layers are made thinner, and at some point tunneling of carriers through the insulator from the channel to the gate electrode takes place. To reduce the resulting leakage current, the insulator can be made thicker by choosing a material with a higher dielectric constant. The voltage on the gate is given by:. The insulator in a MOSFET is a dielectric which can in any event be silicon oxide, but many other dielectric materials are employed. The generic term for the dielectric is gate dielectric since the dielectric lies directly below the gate electrode and above the channel of the MOSFET. The source-to-body and drain-to-body junctions are the object of much attention because of three major factors: The drain induced barrier lowering of the threshold voltage and channel length modulation effects upon I-V curves are reduced by using shallow junction extensions. In addition, halo doping can be used, that is, the addition of very thin heavily doped regions of the same doping type as the body tight against the junction walls to limit the extent of depletion regions. The capacitive effects are limited by using raised source and drain geometries that make most of the contact area border thick dielectric instead of silicon. These various features of junction design are shown with artistic license in the figure. Over the past decades, the MOSFET has continually been scaled down in size; typical MOSFET channel lengths were once several micrometres , but modern integrated circuits are incorporating MOSFETs with channel lengths of tens of nanometers. The semiconductor industry maintains a "roadmap", the ITRS, [38] which sets the pace for MOSFET development. Historically, the difficulties with decreasing the size of the MOSFET have been associated with the semiconductor device fabrication process, the need to use very low voltages, and with poorer electrical performance necessitating circuit redesign and innovation small MOSFETs exhibit higher leakage currents and lower output resistance. Smaller MOSFETs are desirable for several reasons. The main reason to make transistors smaller is to pack more and more devices in a given chip area. This results in a chip with the same functionality in a smaller area, or chips with more functionality in the same area. Since fabrication costs for a semiconductor wafer are relatively fixed, the cost per integrated circuits is mainly related to the number of chips that can be produced per wafer. Hence, smaller ICs allow more chips per wafer, reducing the price per chip. In fact, over the past 30 years the number of transistors per chip has been doubled every 2—3 years once a new technology node is introduced. For example, the number of MOSFETs in a microprocessor fabricated in a 45 nm technology can well be twice as many as in a 65 nm chip. For example, one approach to size reduction is a scaling of the MOSFET that requires all device dimensions to reduce proportionally. The main device dimensions are the channel length, channel width, and oxide thickness. When they are scaled down by equal factors, the transistor channel resistance does not change, while gate capacitance is cut by that factor. Hence, the RC delay of the transistor scales with a similar factor. While this has been traditionally the case for the older technologies, for the state-of-the-art MOSFETs reduction of the transistor dimensions does not necessarily translate to higher chip speed because the delay due to interconnections is more significant. Producing MOSFETs with channel lengths much smaller than a micrometre is a challenge, and the difficulties of semiconductor device fabrication are always a limiting factor in advancing integrated circuit technology. Though processes such as ALD have improved fabrication for small components, the small size of the MOSFET less than a few tens of nanometers has created operational problems:. The dual-gate MOSFET has a tetrode configuration, where both gates control the current in the device. It is commonly used for small-signal devices in radio frequency applications where biasing the drain-side gate at constant potential reduces the gain loss caused by Miller effect , replacing two separate transistors in cascode configuration. Other common uses in RF circuits include gain control and mixing frequency conversion. The "tetrode" description, though accurate, does not replicate the vacuum-tube tetrode. Vacuum-tube tetrodes, using a screen grid, exhibit much lower grid-plate capacitance and much higher output impedance and voltage gains than triode vacuum tubes. These improvements are commonly an order of magnitude 10 times or considerably more. Tetrode transistors whether bipolar junction or field-effect do not exhibit improvements of such a great degree. The FinFET is a double-gate silicon-on-insulator device, one of a number of geometries being introduced to mitigate the effects of short channels and reduce drain-induced barrier lowering. The "fin" refers to the narrow channel between source and drain. A thin insulating oxide layer on either side of the fin separates it from the gate. SOI FinFETs with a thick oxide on top of the fin are called double-gate and those with a thin oxide on top as well as on the sides are called triple-gate FinFETs. There are depletion-mode MOSFET devices, which are less commonly used than the standard enhancement-mode devices already described. These are MOSFET devices that are doped so that a channel exists even with zero voltage from gate to source. To control the channel, a negative voltage is applied to the gate for an n-channel device , depleting the channel, which reduces the current flow through the device. In essence, the depletion-mode device is equivalent to a normally closed on switch, while the enhancement-mode device is equivalent to a normally open off switch. Depletion-mode MOSFET families include BF by Siemens and Telefunken , and the BF in the s by Philips later to become NXP Semiconductors , whose derivatives are still used in AGC and RF mixer front-ends. A MISFET is a metal—insulator-semiconductor field-effect transistor. All MOSFETs are MISFETs, but not all MISFETs are MOSFETs. The gate dielectric insulator in a MISFET is silicon dioxide in a MOSFET, but other materials can also be employed. The gate dielectric lies directly below the gate electrode and above the channel of the MISFET. The term "metal" is historically used for the gate material, even though now it is usually highly doped polysilicon or some other nonmetal. For devices of equal current driving capability, n-channel MOSFETs can be made smaller than p-channel MOSFETs, due to p-channel charge carriers holes having lower mobility than do n-channel charge carriers electrons , and producing only one type of MOSFET on a silicon substrate is cheaper and technically simpler. These were the driving principles in the design of NMOS logic which uses n-channel MOSFETs exclusively. However, neglecting leakage current , unlike CMOS logic, NMOS logic consumes power even when no switching is taking place. With advances in technology, CMOS logic displaced NMOS logic in the mids to become the preferred process for digital chips. Power MOSFETs have a different structure. Using a vertical structure, it is possible for the transistor to sustain both high blocking voltage and high current. The voltage rating of the transistor is a function of the doping and thickness of the N- epitaxial layer see cross section , while the current rating is a function of the channel width the wider the channel, the higher the current. In a planar structure, the current and breakdown voltage ratings are both a function of the channel dimensions respectively width and length of the channel , resulting in inefficient use of the "silicon estate". With the vertical structure, the component area is roughly proportional to the current it can sustain, and the component thickness actually the N-epitaxial layer thickness is proportional to the breakdown voltage. Power MOSFETs with lateral structure are mainly used in high-end audio amplifiers and high-power PA systems. Their advantage is a better behaviour in the saturated region corresponding to the linear region of a bipolar transistor than the vertical MOSFETs. Vertical MOSFETs are designed for switching applications. DMOS stands for double-diffused metal—oxide—semiconductor. There are LDMOS Lateral Double-diffused Metal Oxide Semiconductor and VDMOS Vertical Double-diffused Metal Oxide Semiconductor. Most power MOSFETs are made using this technology. Semiconductor sub-micrometer and nanometer electronic circuits are the primary concern for operating within the normal tolerance in harsh radiation environments like outer space. One of the design approaches for making a radiation-hardened-by-design RHBD device is Enclosed-Layout-Transistor ELT. Normally, the gate of the MOSFET surrounds the drain, which is placed in the center of the ELT. The source of the MOSFET surrounds the gate. Another RHBD MOSFET is called H-Gate. Both of these transistors have very low leakage current with respect to radiation. However, they are large in size and take more space on silicon than a standard MOSFET. In older STI shallow trench isolation designs, radiation strikes near the silicon oxide region cause the channel inversion at the corners of the standard MOSFET due to accumulation of radiation induced trapped charges. If the charges are large enough, the accumulated charges affect STI surface edges along the channel near the channel interface gate of the standard MOSFET. Thus the device channel inversion occurs along the channel edges and the device creates off-state leakage path, causing device to turn on. So the reliability of circuits degrades severely. The ELT offers many advantages. These advantages include improvement of reliability by reducing unwanted surface inversion at the gate edges that occurs in the standard MOSFET. Since the gate edges are enclosed in ELT, there is no gate oxide edge STI at gate interface , and thus the transistor off-state leakage is reduced very much. Low-power microelectronic circuits including computers, communication devices and monitoring systems in space shuttle and satellites are very different from what we use on earth. These special electronics are designed by applying very different techniques using RHBD MOSFETs to ensure the safe space journey and also space-walk of astronauts. From Wikipedia, the free encyclopedia. Patent 1,, "Method and apparatus for controlling electric currents". John Atalla and Dawon Kahng fabricate working transistors and demonstrate the first successful MOS field-effect amplifier U. Patent 3,, filed in , issued in ". Archived from the original on October 6, Retrieved 30 August IEEE Journal of Solid-state circuits. Archived from the original on June 10, The most recent version of the BSIM model is described in Sriramkumar V. Department of EE and CS, UC Berkeley. Analysis and Design of Analog Integrated Circuits Fourth ed. Low-Power Deep Sub-Micron CMOS Logic: Analog VLSI and Neural Systems. Smith; Alister Hamilton Engineering Silicon from Neurobiology. Field-programmable Logic and Applications: In Chris Toumazou; Nicholas C. Circuits and systems tutorials. John Wiley and Sons. Nano, Quantum and Molecular Computing. Statistical Analysis and Optimization For VLSI: MOSFET modeling for circuit analysis and design. Microelectronic circuits Fifth ed. See, for example, Narain Arora Mosfet modeling for VLSI simulation: EDN September 20, Physics of Semiconductor Devices. Weber, Jarek Dabrowski Editors Predictive Simulation of Semiconductor Processing: Low Voltage, Low Power VLSI Subsystems. Archived from the original PDF on February 27, Lindsay; Pawlak; Kittl; Henson; Torregiani; Giangrandi; Surdeanu; Vandervorst; Mayur; Ross; McCoy; Gelpey; Elliott; Pages; Satta; Lauwers; Stolk; Maex IBM Journal of Research and Development. Power and Timing Modeling, Optimization, and Simulation 10th Int. Design for Manufacturability And Statistical Design: Simplified cross section of FinFET double-gate MOSFET. In Yoon-Soo Park; Michael Shur; William Tang. Silicon-on-Insulator Technology and Devices. Jayant Baliga, PWS publishing Company, Boston. Understanding MOSFET Characteristics Associated With The Figure of Merit. Archived April 5, , at the Wayback Machine. Understanding Gate Charge and Using It To Assess Switching Performance. Archived June 30, , at the Wayback Machine. Avalanche diode Transistor Tetrode transistor Pentode transistor Memistor Memristor Bipolar junction transistor BJT FinFET CMOS MOSFET JFET Field-effect transistor FET Quantum circuit Constant-current diode CLD, CRD Darlington transistor DIAC Diode Heterostructure barrier varactor Insulated-gate bipolar transistor IGBT Integrated circuit IC Light-emitting diode LED Photodetector Photodiode PIN diode Schottky diode Silicon controlled rectifier SCR Thyristor TRIAC Unijunction transistor UJT Varicap Zener diode. Acorn tube Audion Beam tetrode Barretter Compactron Diode Fleming valve Nonode Nuvistor Pentagrid Hexode, Heptode, Octode Pentode Photomultiplier Phototube Tetrode Triode. Backward-wave oscillator BWO Cavity magnetron Crossed-field amplifier CFA Gyrotron Inductive output tube IOT Klystron Maser Sutton tube Traveling-wave tube TWT. Beam deflection tube Charactron Iconoscope Magic eye tube Monoscope Selectron tube Storage tube Trochotron Video camera tube Williams tube. Cold cathode Crossatron Dekatron Ignitron Krytron Mercury-arc valve Neon lamp Nixie tube Thyratron Trigatron Voltage-regulator tube. Potentiometer digital Variable capacitor Varicap. Connector audio and video electrical power RF Electrolytic detector Ferrite Fuse resettable Resistor Switch Thermistor Transformer Varistor Wire Wollaston wire. Capacitor types Ceramic resonator Crystal oscillator Inductor Parametron Relay reed relay mercury switch. 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